Intel & Micron Ship Industry’s First 4bits/cell 3D NAND Technology
Micron Technology (MU) is a world leader in innovative memory solutions. Through their global brands — Micron, Crucial®, and Ballistix® — their broad portfolio of high-performance memory technologies, including DRAM, NAND, NOR Flash and 3D XPoint™ memory, is transforming how the world uses information. Backed by nearly 40 years of technology leadership, Micron’s memory solutions enable the world’s most innovative computing, consumer, enterprise storage, data center, mobile, embedded, and automotive applications.
Dow 30 component and tech giant Intel Corporation (INTC) designs manufacture and sells computer, networking, data storage, and communication platforms worldwide. The company operates through Client Computing Group, Data Center Group, Internet of Things Group, Non-Volatile Memory Solutions Group, Programmable Solutions Group, and All Other segments. Its platforms are used in notebooks, desktops, and wireless and wired connectivity products; enterprise, cloud, and communication infrastructure market segments; and retail, automotive, industrial, and various other embedded applications. The company offers microprocessors, and system-on-chip and multichip packaging products. It also provides NAND flash memory products primarily used in solid-state drives; and programmable semiconductors and related products for communications, data center, industrial, military, and automotive markets. In addition, the company develops computer vision and machine learning, data analysis, localization, and mapping for advanced driver assistance systems and autonomous driving. It serves original equipment manufacturers, original design manufacturers, industrial and communication equipment manufacturers, and cloud service providers.
Leveraging a proven 64-layer structure, Intel & Micron have introduced, produced and shipped a new 4bits/cell NAND technology that achieves 1 terabit (Tb) density per die or the world’s highest-density flash memory. They also are continuing to progress on their development of the third-generation 96-tier 3D NAND structure which provides a 50% increase in layers and thus reinforcing their leadership in producing the world’s highest Gb/mm2 areal density. The companies suggest that by leveraging four planes vs the competitors’ two planes, the new Intel and Micron NAND flash memory can write and read more cells in parallel thus delivering faster throughput and higher bandwidth at the system level. The new 64-layer 4bits/cell NAND technology enables denser storage in a smaller space, bringing significant cost savings for read-intensive cloud workloads while being appropriate for consumer and client computing applications, providing cost-optimized storage solutions.
Micron Executive Vice President, Technology Development, Scott DeBoer stated, “With the introduction of 64-layer 4bits/cell NAND technology, we are achieving 33 percent higher array density compared to TLC, which enables us to produce the first commercially available 1 terabit die in the history of semiconductors. We’re continuing flash technology innovation with our 96-layer structure, condensing even more data into smaller spaces, unlocking the possibilities of workload capability and application construction.”
RV Giridhar, Intel vice president, Non-Volatile Memory Technology Development stated, “Commercialization of 1Tb 4bits/cell is a big milestone in NVM history and is made possible by numerous innovations in technology and design that further extend the capability of our Floating Gate 3D NAND technology. The move to 4bits/cell enables compelling new operating points for density and cost in Datacenter and Client storage.”